JPH0370912B2 - - Google Patents

Info

Publication number
JPH0370912B2
JPH0370912B2 JP58033925A JP3392583A JPH0370912B2 JP H0370912 B2 JPH0370912 B2 JP H0370912B2 JP 58033925 A JP58033925 A JP 58033925A JP 3392583 A JP3392583 A JP 3392583A JP H0370912 B2 JPH0370912 B2 JP H0370912B2
Authority
JP
Japan
Prior art keywords
lower layer
infrared radiation
radiation detector
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58033925A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58161834A (ja
Inventor
Barii Retsudohetsudo Jon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JPS58161834A publication Critical patent/JPS58161834A/ja
Publication of JPH0370912B2 publication Critical patent/JPH0370912B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/157—CCD or CID infrared image sensors
    • H10F39/1575—CCD or CID infrared image sensors of the hybrid type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24—Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • H01L2224/241—Disposition
    • H01L2224/24135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/24145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H01L2224/24146—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked the HDI interconnect connecting to the same level of the lower semiconductor or solid-state body at which the upper semiconductor or solid-state body is mounted
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Radiation Pyrometers (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP58033925A 1982-03-03 1983-03-03 赤外線放射検出器およびその製造方法 Granted JPS58161834A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8206290 1982-03-03
GB08206290A GB2116363B (en) 1982-03-03 1982-03-03 Multi-level infra-red detectors and their manufacture

Publications (2)

Publication Number Publication Date
JPS58161834A JPS58161834A (ja) 1983-09-26
JPH0370912B2 true JPH0370912B2 (en]) 1991-11-11

Family

ID=10528765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58033925A Granted JPS58161834A (ja) 1982-03-03 1983-03-03 赤外線放射検出器およびその製造方法

Country Status (5)

Country Link
US (2) US4555720A (en])
EP (1) EP0087842B1 (en])
JP (1) JPS58161834A (en])
DE (1) DE3379884D1 (en])
GB (1) GB2116363B (en])

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2604298B1 (fr) * 1986-09-19 1988-10-28 Commissariat Energie Atomique Procede de realisation d'une prise de contact electrique sur un substrat en hgcdte de conductivite p et application a la fabrication d'une diode n/p
FR2606213B1 (fr) * 1986-11-05 1989-03-31 Scientif Tech Batiment Centre Nouveau materiau composite de preference flexible, dispositif de mesure formant un fluxmetre et un capteur de temperature combines comprenant un tel materiau composite et procede de preparation d'un tel materiau
US5091288A (en) * 1989-10-27 1992-02-25 Rockwell International Corporation Method of forming detector array contact bumps for improved lift off of excess metal
GB2247985A (en) * 1990-09-12 1992-03-18 Philips Electronic Associated Plural-wavelength infrared detector devices
GB2248964A (en) * 1990-10-17 1992-04-22 Philips Electronic Associated Plural-wavelength infrared detector devices
US5227656A (en) * 1990-11-06 1993-07-13 Cincinnati Electronics Corporation Electro-optical detector array
US5714802A (en) * 1991-06-18 1998-02-03 Micron Technology, Inc. High-density electronic module
US5416030A (en) * 1993-05-11 1995-05-16 Texas Instruments Incorporated Method of reducing leakage current in an integrated circuit
US6570221B1 (en) 1993-07-27 2003-05-27 Hyundai Electronics America Bonding of silicon wafers
FR2713017B1 (fr) * 1993-11-23 1996-01-12 Commissariat Energie Atomique Détecteur de rayonnements dans deux bandes de longueurs d'ondes et procédé de fabrication de ce détecteur.
DE69409257T2 (de) * 1993-12-13 1998-09-10 Honeywell, Inc., Minneapolis, Minn. Integrierte silizium-vakuum-mikropackung für infrarot-geräte
FR3026562A1 (fr) * 1995-08-30 2016-04-01 Commissariat Energie Atomique Detecteur infrarouge mulispectral.
US5671914A (en) * 1995-11-06 1997-09-30 Spire Corporation Multi-band spectroscopic photodetector array
US6036872A (en) 1998-03-31 2000-03-14 Honeywell Inc. Method for making a wafer-pair having sealed chambers
US6355939B1 (en) 1998-11-03 2002-03-12 Lockheed Martin Corporation Multi-band infrared photodetector
US6180990B1 (en) 1999-03-26 2001-01-30 Lockheed Martin Corporation Hyperspectral radiation detector
US6746149B1 (en) * 1999-06-01 2004-06-08 The United States of America as represented by the Admistrator of NASA Rare earth optical temperature sensor
US6323941B1 (en) 1999-08-06 2001-11-27 Lockheed Martin Corporation Sensor assembly for imaging passive infrared and active LADAR and method for same
US20030006493A1 (en) * 2001-07-04 2003-01-09 Matsushita Electric Industrial Co., Ltd. Semiconductor device and manufacturing method thereof
US6777648B2 (en) * 2002-01-11 2004-08-17 Intel Corporation Method and system to manufacture stacked chip devices
US6897447B2 (en) * 2002-12-05 2005-05-24 Lockheed Martin Corporation Bias controlled multi-spectral infrared photodetector and imager
US7135698B2 (en) * 2002-12-05 2006-11-14 Lockheed Martin Corporation Multi-spectral infrared super-pixel photodetector and imager
FR2868602B1 (fr) 2004-04-05 2006-05-26 Commissariat Energie Atomique Circuit de detection photonique a structure mesa
WO2006044982A1 (en) * 2004-10-20 2006-04-27 Massachusetts Institute Of Technology Infrared detection material and method of production
US11205295B2 (en) 2006-09-19 2021-12-21 Imagination Technologies Limited Ray tracing system architectures and methods
TWI356333B (en) * 2008-03-21 2012-01-11 Chimei Innolux Corp Liquid crystal display and remote controlling syst
DE102013108280B3 (de) * 2013-08-01 2014-10-09 Pyreos Ltd. Verfahren zum Herstellen eines Mikrosystems mit Pixel

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3483096A (en) * 1968-04-25 1969-12-09 Avco Corp Process for making an indium antimonide infrared detector contact
US3987298A (en) * 1975-07-09 1976-10-19 Honeywell Inc. Photodetector system for determination of the wavelength of incident radiation
US4037311A (en) * 1976-07-14 1977-07-26 U.S. Philips Corporation Methods of manufacturing infra-red detector elements
US4206470A (en) * 1977-09-01 1980-06-03 Honeywell Inc. Thin film interconnect for multicolor IR/CCD
GB2027985B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Infra-red detectors
GB2027556B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Manufacturing infra-red detectors
US4253882A (en) * 1980-02-15 1981-03-03 University Of Delaware Multiple gap photovoltaic device
FR2484469A1 (fr) * 1980-02-22 1981-12-18 Telecommunications Sa Procede de preparation de couches homogenes de hg1-xcdxte
JPS5710983A (en) * 1980-06-23 1982-01-20 Canon Inc Photo sensor
JPS5710926A (en) * 1980-06-25 1982-01-20 Toshiba Corp Manufacture of semiconductor device
US4322571A (en) * 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
US4318217A (en) * 1980-08-15 1982-03-09 U.S. Philips Corporation Method of manufacturing an infra-red detector device
US4559695A (en) * 1981-03-27 1985-12-24 U.S. Philips Corporation Method of manufacturing an infrared radiation imaging device
US4520554A (en) * 1983-02-10 1985-06-04 Rca Corporation Method of making a multi-level metallization structure for semiconductor device
US4451326A (en) * 1983-09-07 1984-05-29 Advanced Micro Devices, Inc. Method for interconnecting metallic layers

Also Published As

Publication number Publication date
EP0087842A2 (en) 1983-09-07
EP0087842A3 (en) 1986-08-20
US4555720A (en) 1985-11-26
GB2116363B (en) 1985-10-16
DE3379884D1 (en) 1989-06-22
EP0087842B1 (en) 1989-05-17
JPS58161834A (ja) 1983-09-26
GB2116363A (en) 1983-09-21
US4625389A (en) 1986-12-02

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